Method and system for template assisted wafer bonding

ABSTRACT

A method of fabricating a composite semiconductor structure includes providing a substrate including a plurality of devices and providing a compound semiconductor substrate including a plurality of photonic devices. The method also includes dicing the compound semiconductor substrate to provide a plurality of photonic dies. Each die includes one or more of the plurality of photonics devices. The method further includes providing an assembly substrate, mounting the plurality of photonic dies on predetermined portions of the assembly substrate, aligning the substrate and the assembly substrate, joining the substrate and the assembly substrate to form a composite substrate structure, and removing at least a portion of the assembly substrate from the composite substrate structure.

CROSS-REFERENCES TO RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 13/869,408, filed on Apr. 24, 2013, entitled “Method and Systemfor Template Assisted Wafer Bonding,” which is a continuation of U.S.patent application Ser. No. 13/527,394, filed on Jun. 19, 2012, entitled“Method and System for Template Assisted Wafer Bonding,” now U.S. Pat.No. 8,445,326, which is a continuation of U.S. patent application Ser.No. 13/112,142, filed on May 20, 2011, entitled “Method and System forTemplate Assisted Wafer Bonding,” now U.S. Pat. No. 8,222,084, whichclaims benefit under 35 U.S.C. §119(e) of U.S. Provisional PatentApplication No. 61/420,917, filed on Dec. 8, 2010, entitled “Method andSystem for Template Assisted Wafer Bonding,” the disclosures of whichare hereby incorporated by reference in their entirety for all purposes.

BACKGROUND OF THE INVENTION

Advanced electronic functions such as photonic device bias control,modulation, amplification, data serialization and de-serialization,framing, routing, and other functions are typically deployed on siliconintegrated circuits. A key reason for this is the presence of a globalinfrastructure for the design and fabrication of silicon integratecircuits that enables the production of devices having very advancedfunctions and performance at market-enabling costs. Silicon has not beenuseful for light emission or optical amplification due to its indirectenergy bandgap. This deficiency has prevented the fabrication ofmonolithically integrated optoelectronic integrated circuits on silicon.

Compound semiconductors such as indium phosphide, gallium arsenide, andrelated ternary and quaternary materials have been extremely importantfor optical communications, and in particular light emitting devices andphotodiodes because of their direct energy bandgap. At the same time,integration of advanced electrical functions on these materials has beenlimited to niche, high-performance applications due to the much highercost of fabricating devices and circuits in these materials.

Thus, there is a need in the art for improved methods and systemsrelated to composite integration of silicon and compound semiconductordevices.

SUMMARY OF THE INVENTION

Embodiments of the present invention relate to methods and systems fortemplate assisted bonding of semiconductor wafers, also referred to assubstrates. More particularly, embodiments of the present inventionrelate to methods and apparatus for wafer-scale bonding of photonicdevices to SOI wafers including CMOS devices. Embodiments of the presentinvention have wider applicability than this example and also includeapplications for heterogeneous growth of semiconductor materials orintegration of III-V materials for high-speed devices on silicon.

According to an embodiment of the present invention, methods that enablewafer-scale processing in silicon photonics are provided. As an example,according to an embodiment of the present invention, a method offabricating a composite semiconductor structure is provided. The methodincludes providing an SOI substrate including a plurality ofsilicon-based devices, providing a compound semiconductor substrateincluding a plurality of photonic or other devices such as high-speedtransistors, and dicing or otherwise forming the compound semiconductorsubstrate to provide a plurality of photonic dies. Each die includes oneor more of the plurality of photonic or electronic devices. The methodalso includes providing an assembly substrate, mounting the plurality ofcompound semiconductor dies on predetermined portions of the assemblysubstrate, aligning the SOI substrate and the assembly substrate,joining the SOI substrate and the assembly substrate to form a compositesubstrate structure, and removing at least a portion of the assemblysubstrate from the composite substrate structure.

According to another embodiment of the present invention, a method ofgrowing a compound semiconductor structure on a silicon-based substrateis provided. The method includes providing an SOI base wafer having abonding surface, providing a seed wafer, and dicing the seed wafer toprovide a plurality of seed dies. The method also includes providing atemplate wafer, mounting the plurality of seed dies on the templatewafer, and bonding the template wafer to the SOI base wafer. Theplurality of seed dies are joined to the bonding surface of the SOI basewafer. The method further includes removing at least a portion of thetemplate wafer, exposing at least a portion of a surface of theplurality of seed dies, and growing the compound semiconductor structureon the exposed seed dies.

Numerous benefits are achieved using the present invention overconventional techniques. For example, in an embodiment according to thepresent invention, the use of a template wafer allows more expensiveIII-V materials to be used sparingly, for example, only where requiredto implement a specific device function. Thus, the cost structure of thefinished product is improved by embodiments described herein byminimizing the quantity of III-V or other materials needed.Additionally, multiple levels of optical interconnects can be formed ina photonic integrated circuit according to some embodiments by routingoptical signals in patterned regions of the template wafer that remainafter an anneal process is employed to create a split plane. The attachand split process described herein may be employed a single time ormultiple times.

In a particular embodiment, multiple bonding processes are employed andthree dimensional structures of alternating crystalline silicon withinterspersed planes of III-V, II-VI, or other materials, are formed. Yetanother benefit provided by embodiments of the present invention arethat alignment to a silicon base wafer is performed on a wafer-scalebasis. Additionally, definition of active stripes or regions may beperformed on the III-V or other material after the wafer bondingprocess, significantly relaxing alignment tolerances.

Depending upon the embodiment, one or more of these benefits may exist.These and other benefits have been described throughout the presentspecification and more particularly below. Various additional objects,features and advantages of the present invention can be more fullyappreciated with reference to the detailed description and accompanyingdrawings that follow.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is simplified schematic diagram of an integrated optoelectronicdevice according to an embodiment of the present invention;

FIG. 2 is a simplified flowchart illustrating a method of fabricatingintegrated optoelectronic devices according to an embodiment of thepresent invention;

FIG. 3A is a simplified plan view of a processed SOI substrate accordingto an embodiment of the present invention;

FIG. 3B is a simplified perspective view of a processed III-V substrateand dicing of the processed III-V substrate according to an embodimentof the present invention;

FIG. 3C is a simplified plan view of an assembly substrate including aplurality of III-V die according to an embodiment of the presentinvention;

FIG. 3D is a simplified exploded perspective diagram illustratingjoining of the processed SOI substrate and assembly substrate includinga plurality of III-V die according to an embodiment of the presentinvention;

FIG. 3E is a simplified perspective view of removal of a portion of theassembly substrate from the bonded substrate structure illustrated inFIG. 3D;

FIG. 4 is a simplified schematic diagram illustrating a portion of acomposite substrate structure after wafer bonding, assembly substratesplitting, and polishing according to an embodiment of the presentinvention;

FIG. 5 is a simplified plan view of a substrate with integratedoptoelectronic devices according to an embodiment of the presentinvention.

FIG. 6 is a simplified flowchart illustrating a method of fabricatingintegrated optoelectronic devices according to another embodiment of thepresent invention;

FIG. 7A is a simplified schematic diagram illustrating a portion of acomposite substrate structure during device definition according to anembodiment of the present invention;

FIG. 7B is a simplified schematic diagram illustrating a portion of acomposite substrate structure after processing according to anembodiment of the present invention;

FIG. 7C is a simplified schematic diagram of a multilayer structureaccording to an embodiment of the present invention;

FIG. 8 is a simplified flowchart illustrating a method of performingheterogeneous epitaxial growth according to an embodiment of the presentinvention;

FIGS. 9A-9E are simplified schematic diagrams of a portion of acomposite substrate structure at various fabrication stages according toan embodiment of the present invention; and

FIG. 10 is a simplified schematic diagram of a multilayer structurefabricated according to an embodiment of the present invention.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

According to the present invention, methods and systems related totemplate assisted bonding of semiconductor wafers are provided. Merelyby way of example, the invention has been applied to a method of bondingIII-V dies (or device regions for more complex circuits) to a substrateat a wafer level using an assembly substrate (also referred to as atemplate wafer). The method and apparatus is applicable to a variety ofsemiconductor processing applications including wafer-scale processingof photonics integrating silicon-devices and silicon circuitsintegrating high-speed electronic functions with compound semiconductordevices.

The inventors have determined that the commercial significance ofsilicon photonics will be enhanced if cost and power can be reducedrelative to discrete implementations while not sacrificing performance.According to embodiments of the present invention, performance parity isachieved by integrating III-V materials onto the silicon photonic waferas a wafer-scale process. As described more fully throughout the presentspecification, template-assisted bonding provides a wafer-scaleprocessing paradigm for the composite integration of III-V materialswith silicon or silicon-on-insulator that is amenable to batchprocessing (cassette to cassette).

Without limiting embodiments of the present invention, the followingdefinitions are used to define processes and structures describedherein:

Composite Bonding: A wafer bonding process using a combination of metalto metal, metal interface layer assisted, and/or direct semiconductorbonding to achieve a combination of the desirable characteristics ofeach of these techniques. Benefits provided by these techniques include,without limitation, strength for a metal to metal bond, ability toaccommodate thermal expansion coefficient mismatches and surfaceroughness for metal interface layer assisted, and optical transparencyfor direct semiconductor bonding.

Composite Semiconductor-on-Insulator (C-SOI): A silicon photonic waferthat combines wafer-bonded III-V materials on a silicon-on-insulatorsubstrate to create a composite of III-Vs, silicon, and potentiallyother materials. The resultant stack is referred to as a compositesemiconductor-on-insulator wafer, or a C-SOI wafer or substrate.

Template-Assisted Bonding: Wafer bonding of pieces at a wafer-scalelevel through the intermediate step of producing a template. Asdescribed throughout the present specification, in an embodiment, anintermediate carrier (also referred to as an assembly substrate), forexample, a carrier that has been prepared to include an implant regionto enable a cleaner separation of the material on the template from thecarrier substrate, is utilized.

FIG. 1 is simplified schematic diagram of an integrated optoelectronicdevice 100 according to an embodiment of the present invention.Referring to FIG. 1, an SOI substrate 110 (also referred to as a basewafer) including a silicon handle wafer 112, an oxide layer 114 and asingle crystal silicon layer 116 is processed to form one or moreelectronic circuits, photonic elements such as waveguides, multimodeinterference couplers, gratings, index tuning elements, Mach-Zendermodulators (MZMs), or the like. As an example, CMOS circuits can befabricated in silicon layer 116 providing for a wide variety ofelectrical device functionality. In the schematic diagram illustrated inFIG. 1, these circuits and elements are formed in layer 116 although theactual device components can extend outside layer 116. Although an SOIsubstrate 110 is illustrated in FIG. 1, some embodiments utilize asilicon wafer in place of the SOI substrate.

A waveguide 130 formed in the device layer of the assembly substrate(described more fully throughout the present specification) isillustrated in FIG. 1. As shown in FIG. 1, this device layer providesfor multiple functionalities, including an electrical interconnect layerconnected to CMOS circuitry formed in the single crystal silicon layer116 of the SOI substrate through via 132. The waveguide 130 can be anoptical waveguide defined in the device layer to interconnect opticaldevices or to bring the optical signal from one section of the structureto another section. Thus, the device layer of the assembly substrate thetemplate wafer itself can be processed into several different types offunctional applications. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

In one embodiment, the substrate can be removed from the standardsilicon process flow (e.g., a CMOS process flow) prior to metalpatterning. The lack of metal patterning enables higher temperatureprocessing to be performed during the template assisted bonding processdescribed herein. In this embodiment, the substrate can be returned tothe fabrication facility or other suitable processing facility forcompletion of the standard silicon process after the template assistedbonding process. FIG. 3A is a simplified plan view of a processed SOIsubstrate corresponding to SOI substrate 110 illustrated in FIG. 1. Theprocessed SOI substrate includes a plurality of device regionsillustrated by the grid shown in FIG. 3A.

FIG. 3B is a simplified perspective view of a processed III-V substrateand dicing of the processed III-V substrate according to an embodimentof the present invention. In the embodiment illustrated in FIG. 3B,dicing is performed using a saw blade but embodiments of the presentinvention are not limited to this particular dicing method and othertechniques are included within the scope of the present invention.Typically, III-V substrates are smaller than the processed SOI substrateillustrated in FIG. 3A. After the dicing operation illustrated in FIG.3B, a plurality of III-V dies are available for mounting to an assemblysubstrate as described more fully throughout the present specification.III-V dies can include elements suitable as gain chips, photodetectors,MZMs, circulators, or the like. Although dicing is discussed in relationto some embodiments, the present invention is not limited to thisparticular technique for separating materials into smaller sections forbonding. As will be evident to one of skill in the art, dicing is onemethod suitable for use with embodiments of the present invention andother separation methods such as cleaving, etching, or the like areincluded within the scope of the present invention and may be utilizedas well.

FIG. 3C is a simplified plan view of an assembly substrate including aplurality of III-V die according to an embodiment of the presentinvention. Although not illustrated in FIG. 3C, the assembly substrate,also referred to as a template substrate or wafer is processed toprovide a mechanism for wafer separation. In an embodiment, the assemblysubstrate (e.g., a silicon substrate that is the same size as theprocessed SOI substrate) is oxidized and ion implanted (e.g., using H₂or He₂ ⁺ ions) to form a wafer separation region (i.e., a fractureplane) at a predetermined depth into the assembly substrate. Such aprocess is illustrated in the assembly substrate-base layer (alsoreferred to as a base region) and assembly substrate-device layer (alsoreferred to as a device region) as shown in FIG. 3D. According to theillustrated embodiment, implant separation is used to accomplishsubstrate removal, but it is also possible to physically remove the bulkof the template wafer by mechanical thinning or other lappingtechniques.

In FIG. 3C, the plan view includes the surface of the base layeradjacent the dies and the various III-V dies. The device layer of theassembly substrate can then be patterned with alignment features and/orbonding locations for attachment of the III-V dies as illustrated inFIG. 3C. In addition to III-V die, other devices, structures, andmaterials can be joined to or mounted on the assembly substrate asappropriate to the particular application. In some embodiments, thestrength of the bond between the III-V dies and the assembly substrateis varied as appropriate to the particular application. Thus, bothstrong and weak bonding between these elements is included within thescope of the present invention. Examples of the other materials that canbe attached to the defined bonding locations on the assembly substrateare one or multiple III-V materials, II-VI materials, magneticmaterials, silicon-based materials (e.g., silicon material withdifferent characteristics than the silicon from the assembly substrate),nonlinear optical materials, or other materials that provide afunctional enhancement to the functions provided by the devices on theprocessed SOI substrate. Attachment of the III-V dies or other materialscan be performed using a pick and place tool or other suitable dieattach systems.

FIG. 3D is a simplified exploded perspective diagram illustratingjoining of the processed SOI substrate and the assembly substrateincluding the plurality of III-V die according to an embodiment of thepresent invention. The III-V dies mounted on the assembly substrate arerepresented as a III-V device matrix in FIG. 3D and one of skill in theart will appreciate that reference to a matrix indicates, not acontinuous layer, but a dimension in which the III-V dies aredistributed. As illustrated in FIG. 3D, the devices on the processed SOIsubstrate are aligned with the III-V die mounted on the assemblysubstrate and the two substrates are joined to form a bonded substratestructure. As will be evident to one of skill in the art, alignment ofthe elements provides for placement of the III-V dies mounted on theassembly substrate relative to the electronic and/or photonic circuitspresent on the SOI substrate. Several methods of performing waferbonding are included within the scope of the present invention,including methods discussed in U.S. patent application Ser. No.12/902,621, filed on Oct. 12, 2010, the disclosure of which is herebyincorporated by reference in its entirety for all purposes.

In a particular embodiment, an interface assisted bond is formed betweenthe semiconductor elements (e.g., between the layers of the SOIsubstrate and the III-V dies) in which an intermediate layer (e.g.,In_(x)Pd_(y), for example, In_(0.7)Pd_(0.3)), provides an ohmic contactand optical quality including transparency, stress accommodation, andother benefits.

FIG. 3E is a simplified perspective view of removal of the base regionof the assembly substrate from the device region of the assemblysubstrate portion of the bonded substrate structure illustrated in FIG.3D. In an embodiment, an ion implantation process performed on theassembly substrate as discussed above allows for wafer separation of aportion of the assembly substrate (the base region) to occur asillustrated in FIG. 3E. As shown in FIG. 3E, the base region of theassembly substrate is removed, and may be used again in a manneranalogous to substrate reuse associated with SOI substrate fabricationand reuse techniques. Although the wafer separation process isillustrated as following the substrate bonding process, this is notrequired by the present invention and wafer separation may be performedbefore, during, or after the wafer bonding process.

In some embodiments, the processes illustrated in FIGS. 3D and 3E arecombined as heat from the bonding process causes the assembly substrateto split along the plane defined by the peak of the implanted species.In other embodiments, the assembly substrate is split during an annealprocess that is performed either prior to or following the bondingprocess. One of ordinary skill in the art would recognize manyvariations, modifications, and alternatives. In yet other embodiments,lapping and/or polishing steps are utilized to move the base layerportion.

The processed SOI substrate, the attached III-V die matrix, and thedevice region of the assembly substrate, which can include a thinsilicon layer or an oxide/silicon layer associated with the deviceregion of the assembly substrate, as illustrated in FIG. 3E can bepolished using a CMP process or other polishing process to remove anyresidual roughness produced by the splitting process. Thus, embodimentsprovide a substrate 350 that includes a silicon-III-V-silicon stacksuitable for use in fabricating integrated optoelectronic devices. Thesubstrate 350 resulting in FIG. 3E, can be further processed to defineadditional optical or electronic devices in the thin silicon layer.Electrical interconnects are made to the other materials as needed.Referring to FIG. 1, a portion of the device layer of the assemblysubstrate remains on the left portion of the device and another portionis processed to form a waveguide. A via is illustrated as passingthrough the device layer of the assembly substrate to make electricalcontact to silicon layer 116 on the processed SOI substrate. Planarizingmaterial is deposited to planarize and passivate the surfaces of thevarious device elements. Examples of planarizing material includesilicon dioxide, silicon nitride, silicon oxynitride, polyimide or otherpolymeric materials, spin-on glasses, cyclotene, pyraline, or the like.Planarizing materials may be first applied to the base wafer structure110 and then patterned to open access areas through which the deviceelements may be attached to the base wafer.

As an example, if the device region of assembly substrate includes asilicon layer (e.g., single crystal silicon), this silicon layer can beremoved or patterned to form optical interconnects on the chip. Thisenables optical routing to be provided in a process that can be repeatedfor multiple optical levels. In embodiments in which the processed SOIsubstrate was removed from the fabrication facility prior tometallization processes, it is returned for those process steps to beperformed.

As an alternative to the wafer splitting based on an ion implantationprocess as illustrated in FIG. 3E, other embodiments utilize bulkremoval of a portion of the assembly substrate, for example, using achemical mechanical polishing (CMP) process. This technique can beuseful when thicker silicon top layers are desired in the finishedstructures. One of ordinary skill in the art would recognize manyvariations, modifications, and alternatives.

In an embodiment, the substrate 350 including a number of integratedoptoelectronic devices as illustrated in FIG. 3E can be used as a newassembly substrate in order to create a multi-layer stack of silicon andother materials by repeating the processes illustrated in FIGS. 3C-3E.Patterning and planarization may be performed as the processes arerepeated to define multiple layers of optical interconnects. Afterprocessing, the substrate 350 can be diced to provide singulated dies(such as the device illustrated in FIG. 1) for testing and use.

Utilizing the template assisted bonding process illustrated in FIGS.3A-3E, a variety of devices including III-V dies, other materialssuitable for use as gain chips, photodetectors, MZMs, circulators,high-speed electronic devices, or the like, are mounted on the assemblysubstrate, which can be a hydrogen implanted silicon wafer that ispatterned with alignment targets and/or material attach sites. In someimplementations, hydrogen, helium, or other implantation processes areperformed prior to patterning to define the split plane illustrated inFIG. 3E along which the SOI wafer splits, for example, during an annealstep. Referring to FIG. 3E, the illustrated embodiment includes a thinsilicon device layer, creating a silicon-III-V-silicon stack. The devicelayer can be removed or patterned to form optical interconnects on chipand to enable optical routing, which can be repeated for multipleoptical levels. As an example, traces could be patterned in the siliconto form, effectively, an upper plane of optical waveguides. As anotherexample, connections could be formed between multi-core processors inthe SOI substrate and optical waveguides in the device layer. In someembodiments, the assembly substrate can be repolished and reused. Asillustrated in FIG. 10, the processes described herein can be repeatedto create multi-layer stacks of III-V dies and silicon, allowing formulti-layer optical interconnects to be formed.

FIG. 2 is a simplified flowchart illustrating a method 200 offabricating integrated optoelectronic devices according to an embodimentof the present invention. The method includes processing a III-Vsubstrate to form III-V devices (210), such as lasers, optical gainmedia, detectors, modulators, optical elements, or the like. In additionto the formation of III-V devices other materials can be processed toform magnetic device elements for devices such as optical circulators orisolators, other optoelectronic elements, and the like. After deviceprocessing, the III-V substrate can be lapped to form a uniformthickness and diced to provide III-V dies (212). Lapping is notrequired.

The method also includes preparing an assembly substrate (220). In anembodiment, a silicon substrate is oxidized, implanted, and patterned toprovide mounting locations for the III-V dies discussed above (222). Theassembly substrate in this embodiment includes a base region and adevice region separated by a split plane defined by the peak of theimplant dose (e.g., formed during a hydrogen implantation process). Thepatterning process can include definition of metal patterns on thetemplate wafer that define locations where the semiconductor pieces(e.g., III-V semiconductor devices) are bonded. In some embodiments, inaddition to or in place of metal patterns, targets are formed during thepatterning process to provide an indication of locations at which thesemiconductor pieces (e.g., III-V semiconductor devices) are directlybonded. As described more fully throughout the present specification,the device region is bonded to the processed SOI substrate and used fordevice fabrication and the base region is removed and potentiallyreused. An SOI substrate is processed (230) to provide CMOS devices,electronics, photonic elements, and the like. The SOI substrate isprepared for wafer bonding operations including surface preparation(232). The assembly substrate and the SOI substrate are aligned (240)and a wafer bonding process is performed to join the two substrates andform a composite substrate structure (242).

An anneal process is then used to split the assembly substrate at thedepth at which the peak of the implant dose lies (244). In someembodiments, this step is omitted since the assembly substrate splits asa result of the wafer bonding process (242). In some embodiments, thesubstrate after splitting is polished (246) to remove surface roughnessresulting from the splitting process. FIG. 4 is a simplified schematicdiagram illustrating a portion of a composite substrate structure afterwafer bonding, assembly substrate splitting, and polishing according toan embodiment of the present invention. Subsequent processing can alsobe performed to pattern optical waveguides in the device layer of theassembly substrate (248) and to form electrical interconnects (250). Thebonds between the bond pads, the SOI substrate, and the III-V dies, aswell as the bonds between the III-V dies and the SOI substrate can bemetal-assisted bonds, semiconductor-semiconductor bonds, or the like, asdescribed in U.S. patent application Ser. No. 12/902,621, referencedabove.

Although the assembly substrate can be split at or near the depth of theimplant dose peak, embodiments of the present invention are not limitedto this particular split depth and other depths other than the peak ofthe implant dose can be achieved. Also, it should be noted that whilesplitting using an anneal process is described herein as a method ofremoving the assembly substrate, other methods are included within thescope of the present invention, for example, without limitation, lappingto remove the bulk of the assembly substrate, or other suitabletechniques.

It should be appreciated that the specific steps illustrated in FIG. 2provide a particular method of fabricating integrated optoelectronicdevices according to an embodiment of the present invention. Othersequences of steps may also be performed according to alternativeembodiments. For example, alternative embodiments of the presentinvention may perform the steps outlined above in a different order.Moreover, the individual steps illustrated in FIG. 2 may includemultiple sub-steps that may be performed in various sequences asappropriate to the individual step. Furthermore, additional steps may beadded or removed depending on the particular applications. One ofordinary skill in the art would recognize many variations,modifications, and alternatives.

FIG. 5 is a simplified plan view of a substrate with integratedoptoelectronic devices according to an embodiment of the presentinvention. Referring to FIG. 5, the SOI substrate is illustrated withelectrical bond pads formed at peripheral portions of the SOI substrate.CMOS circuits are typically formed in the SOI substrate. Siliconwaveguides formed in the device layer of the assembly substrate providefor optical communication between III-V devices located at the III-Vdevice regions and CMOS elements formed in the SOI substrate and/orother III-V devices. As an example, four multi-core processorsfabricated in the four illustrated portions of the CMOS circuitry regioncan be interconnected using optical waveguides optically coupled to theillustrated III-V devices.

FIG. 6 is a simplified flowchart illustrating a method of fabricatingintegrated optoelectronic devices according to another embodiment of thepresent invention. In the embodiment illustrated in FIG. 6, unprocessedepitaxial material is thinned and attached to an assembly substrate forfurther processing. The method 600 includes growing epitaxial structuresand preparing other materials (610) useful for lasers, detectors,modulator, optical elements, high-speed electronics, magnetic devices,or the like. These unprocessed wafers can be diced (612) to form deviceelements for further processing. The unprocessed wafers can be thinnedafter or as part of the epitaxial growth process.

An assembly wafer is prepared (620), for example by oxidizing,implanting, and patterning a silicon wafer to form a device layer and abase layer. In some embodiments, one or more of these steps are notperformed as appropriate to the particular application. The deviceelements from the unprocessed wafer are mounted onto the assembly wafer(622). An SOI base wafer is processed (630), which can include theformation of CMOS circuits, electronics, and photonic elements andprepared for wafer bonding (632). In an embodiment, additional metalsare deposited onto the SOI base wafer to form contact regions to theunprocessed epitaxial material during the wafer bonding processdescribed below.

The assembly wafer and SOI base wafer are aligned (640) and wafer bonded(642). In an embodiment, the assembly wafer is aligned to the SOI basewafer, but this is not required by embodiments of the present invention.The assembly wafer is split using an anneal process, for example, atapproximately the peak of the implant dose (644). A polishing process(e.g., CMP) is used to remove surface roughness resulting from theseparation of the device layer of the assembly wafer from the base layerof the assembly substrate (646).

After the wafer bonding process and removal of the base layer of theassembly wafer, additional process steps such as patterning of thedevice layer to form optical waveguides (648) and proton implantation orIII-V oxidation (650) may be performed to define active stripe regionson the epitaxial material. For example, during a proton implantationprocess, the energy of the implant is selected such that an implantthrough the “back” of the device structure (formed in the III-Vmaterial) defines the stripe region in the material adjacent to the bondto the SOI base wafer. Planarization of layers (652) and repeating ofone or more of the steps illustrated in FIG. 6 can be used to build up amultilayer structure. Patterning of electrical interconnects to theIII-V materials is performed in some embodiments (654).

In the embodiment illustrated in FIG. 6, epitaxial material is bondedand then post-processed to define stripe regions and interconnects tothe regions on the processed SOI substrate that can include optics andhave other traces defined on them. An advantage of the embodimentillustrated in FIG. 6 is the reduction or elimination of tight alignmenttolerances associated with pre-defined features on the III-V devices.Thus, although the embodiment illustrated in FIG. 6 shares commonelements with the embodiment illustrated in FIG. 3, the methodillustrated in FIG. 6 may provide benefits not available using themethod illustrated in FIG. 1. As an example, because the active striperegion is formed after bonding in the embodiment illustrated in FIG. 6,the alignment tolerance of both the process of attachment to theassembly wafer and the alignment of the assembly wafer to the SOI basewafer are substantially reduced (on the order of approx ±1 μm to approx±10 μm).

It should be appreciated that the specific steps illustrated in FIG. 6provide a particular method of fabricating integrated optoelectronicdevices according to an embodiment of the present invention. Othersequences of steps may also be performed according to alternativeembodiments. For example, alternative embodiments of the presentinvention may perform the steps outlined above in a different order.Moreover, the individual steps illustrated in FIG. 6 may includemultiple sub-steps that may be performed in various sequences asappropriate to the individual step. Furthermore, additional steps may beadded or removed depending on the particular applications. One ofordinary skill in the art would recognize many variations,modifications, and alternatives.

FIG. 7A is a simplified schematic diagram illustrating a portion of acomposite substrate structure during device definition according to anembodiment of the present invention. As illustrated in FIG. 7A, theIII-V device elements (or other materials) are bonded to the SOI basewafer such that the planarizing material may be under the device layeror above the device layer. In one process flow provided by embodimentsof the present invention, openings are defined in the planarizingmaterial that allow the III-V device to be bonded. Formation of theplanarizing material under the device may occur if access regions in thetemplate wafer allow the formation of this planarizing materialsubsequent to the patterning of the template wafer, but prior todefinition of the implant mask. Regions are opened to access the III-Vdevice and an implant mask is formed on the “back” side of the III-Vdevice elements and as described above, the implant defines the activeregions. After implantation, post-processing is performed to defineinterconnects, provide for planarization, and the like.

FIG. 7B is a simplified schematic diagram illustrating a portion of acomposite substrate structure after processing according to anembodiment of the present invention. As illustrated in FIG. 7B, theimplant mask has been removed and an additional planarizing material hasbeen deposited and planarized to provide passivation among otherbenefits.

FIG. 7C is a simplified schematic diagram of a multilayer structureaccording to an embodiment of the present invention. As illustrated inthe cross section in FIG. 7C, multiple levels of silicon and III-Vmaterials are formed by using the embodiments described herein. Siliconlayers can be used to create optical waveguides or can be patterned withvias to carry electrical connections to the III-V semiconductors orother materials in the layer stack. Utilizing embodiments of the presentinvention, it is possible to create circuits in the illustrated silicondevice layers (originally from the assembly wafer), thus creating a“3-D” integrated optoelectronic circuit. One of ordinary skill in theart would recognize many variations, modifications, and alternatives.

FIG. 8 is a simplified flowchart illustrating a method of performingheterogeneous epitaxial growth according to an embodiment of the presentinvention. The method 800 utilizes crystal “seeds” that are attached tothe assembly wafer and then bonded to a processed wafer, for example, asilicon or SOI wafer using, for example, either direct wafer bonding ormetal-assisted bonding. Metal assisted bonding is utilized in someembodiments since the metal layer helps to accommodate stress betweenmaterials with dissimilar thermal coefficients of expansion. The seedmaterial may be any non-silicon crystalline material that is desired onthe silicon, for example, InP or GaAs seed material or other suitablematerials. Although an assembly wafer is utilized in the embodimentillustrated in FIG. 8, this is not required by the present invention andsome embodiments dispense with the use of the assembly wafer and growepitaxial material on a generic wafer having a dissimilar latticeconstant. In other embodiments, III-V material mounted on an assemblywafer form a layer of seeds for epitaxial growth of III-V materials onan SOI wafer following high-temperature CMOS processing steps. One ofordinary skill in the art would recognize many variations,modifications, and alternatives.

Referring to FIG. 8, the method 800 includes lapping a seed materialwafer to a uniform thickness (810). In some embodiments, the seedmaterial wafer is received at a uniform thickness and step 810 isomitted. Seed material may also be lapped and polished to a uniformthickness subsequent to the mounting to the assembly wafer (822). Theseed material wafer is diced (812) to provide a plurality of seedmaterial dies. In various embodiments, the seed material is a III-Vmaterial, a II-VI material, a magnetic material, a non-linear opticalmaterial, or the like. An assembly wafer is prepared (820) and the seedmaterial dies are mounted to the assembly wafer (822). Duringpreparation of the assembly wafer (820), the oxidation, implant, andpatterning steps may all be used or a subset may be used. For example,any or all steps may be eliminated depending upon the particularstructure of the overall 3-D layer stack.

An SOI base wafer is processed up to, but not through, metal depositionprocesses (830) and the SOI base wafer is prepared for wafer bonding(832). In the illustrated embodiment, the SOI base wafer is processed upto the metal deposition processes, but this is not required by theembodiments of the present invention. In other embodiments, the SOIprocessing is stopped prior to steps preceding the metal depositionprocesses and these steps prior to the metal deposition processes arethen performed after epitaxial growth (e.g., at step 850). One ofordinary skill in the art would recognize many variations,modifications, and alternatives.

The assembly wafer is aligned with the SOI base wafer (840) and waferbonding is performed to join the wafers together (842). FIG. 9Aillustrates the implanted assembly wafer with the attached III-V seeddies aligned with the SOI wafer prior to wafer bonding. As describedmore fully below, the embodiment illustrated in FIGS. 9A-9E utilizesIII-V seed crystals in a selective epitaxial growth process. As anexample, rather than bonding an InP structure containing variousepitaxial layers, a set of InP seed crystals are bonded to the assemblysubstrate, which is then bonded to an SOI substrate. Openings are madeto expose the InP seed crystals, and selective epitaxy is performeddefine device regions (e.g., gain materials in a first region, detectorsin another region, MZM devices in a third region, etc.), thus providinga generalized approach for selectively growing III-V materials onselected regions overlying silicon devices. Mixed seed materials may beused, for example InP and GaAs, III-V and II-VI material, or the like.

FIG. 9B illustrates the implanted assembly wafer after a CMP process isperformed to planarize the surface of the seed dies and the device layerof the assembly wafer. Wafer bonding of the two wafers is illustrated inFIG. 9C. The assembly wafer is split at approximately the implant dosepeak to form a device layer and a base layer in embodiments utilizing animplantation process. In other embodiments, the assembly wafer ispolished to remove a portion of the assembly wafer. In the embodimentillustrated in FIG. 9D, a CMP process is used to remove surfaceroughness at the split plane. The base layer has been removed and is notillustrated in FIG. 9D. In some embodiments in which the processeddevices are attached to the assembly wafer, the thickness tolerances ofthe III-V seed dies is controlled (e.g., by a polishing process) toprovide for uniform bonding between bond sites on the SOI substrate andthe III-V seed dies. In addition to CMP processing, a dry or wetchemical etch process could be used to open a hole above the III-V seedsto provide an area for epitaxial growth through the hole.

Access areas are opened for growth on the seed material dies (848) andepitaxial structures are grown using selective epitaxy as illustrated inFIG. 9E. The seed material may be accessed through wet or dry etching,CMP, or the like. Thus, although the seed material dies are mounted onan SOI wafer at this stage of the process, epitaxial growth of materialswith a lattice constant dissimilar from silicon can be performed to formepitaxial materials lattice matched to the seed material dies. Thus,heterogeneous growth (III-V materials on a silicon substrate (e.g., anSOI substrate)) are provided by embodiments of the present invention.

After growth of epitaxial structures lattice matched to the seedmaterial, the remainder of the CMOS processing, as well as processing ofthe seed materials (e.g., III-V materials) can be performed, includingthe metal deposition steps not performed in step 830. Different seedmaterials may be accessed at different points in the process forembodiments in which growth on multiple different seed materials isperformed (for example, both GaAs and InP). Masking of predeterminedportions of the substrate can be performed to access these varied seedmaterials.

In light of the applicability of the methods and systems describedherein to different seed materials, it should be noted that embodimentsof the present invention are therefore useful for applications wherehigh-speed III-V devices or circuits are incorporated onto the siliconwafer and embodiments of the present invention are not limited tooptical elements joined to the silicon substrate. As another example,embodiments of the present invention are useful for the fabrication ofshort-distance optical interconnects (e.g., core-to-core, chip-to-chip,or the like) that can be combined with longer-haul optical devices.Further examples might include integration of high-speed transistors forcircuits (such as power amplifiers) with other circuits formed in CMOSfor wireless communications applications.

The various steps illustrated in FIG. 8 can be repeated to form amultilevel structure as discussed in relation to FIG. 6. It should beappreciated that the specific steps illustrated in FIG. 8 provide aparticular method of performing heterogeneous epitaxial growth accordingto an embodiment of the present invention. Other sequences of steps mayalso be performed according to alternative embodiments. For example,alternative embodiments of the present invention may perform the stepsoutlined above in a different order. Moreover, the individual stepsillustrated in FIG. 8 may include multiple sub-steps that may beperformed in various sequences as appropriate to the individual step.Furthermore, additional steps may be added or removed depending on theparticular applications. One of ordinary skill in the art wouldrecognize many variations, modifications, and alternatives.

Utilizing the methods illustrated in reference to FIGS. 8 and 9A-9E,seed crystals are attached to the assembly substrate and then bonded toa silicon or SOI substrate using direct wafer bonding, metal-assistedbonding, or the like. Some embodiments utilize metal-assisted bondingsince the metal layer will help to accommodate stress between materialswith dissimilar TCEs. The seed material can be non-silicon crystallinematerials that are integrated with silicon, for example, InP, GaAs,other III-Vs, II-VIs, or other suitable seed material. In an alternativeembodiment, the assembly substrate is not used and epitaxial structuresare formed on a substrate having a dissimilar lattice constant. Asillustrated, the seed material may be accessed through wet or dryetching, CMP, or the like.

Different seed crystals may be provided and/or accessed at differentpoints in the process if growth on multiple different seed materials isdesired (for example, both GaAs and InP or a II-VI). The use of multipleseed materials will be useful for applications in which high-speed III-Vdevices or circuits are incorporated onto the silicon structure. Thus,embodiments of the present invention are not limited to opticalinterconnection applications. As another example, this process would beapplicable to the combination of short-distance optical interconnects(e.g., core-to-core, chip-to-chip) with longer-haul optical devices.

FIG. 10 is a simplified schematic diagram of a multilayer structurefabricated according to an embodiment of the present invention. In theembodiment illustrated in FIG. 10, an SOI substrate including CMOSdevices is provided including SOI base wafer 1024, buried oxide (BOX)layer 1022, silicon layer 1020 and CMOS circuitry. A silicon devicelayer 1018 is joined to the SOI substrate and epitaxial layer 1016 isgrown on seed crystals integrated with the silicon device layer 1018.Planarizing material in the plane of the device layer 1018 isillustrated.

Subsequent device layers and epitaxial layers are illustrated making upthe multilayer structure. These layers are formed through repeating thetemplate assisted bonding process with additional templates having seedmaterial, epitaxial material, or the like. For example, template waferswith seed material 1014 and 1012 can be bonded sequentially. Etchedopenings in the template wafer provide access for selective area growthof epitaxial structures. Vias and interconnects may also be formedbetween and within the layers. Additional electronic devices or circuitsmay also be formed on the template wafers in the stack.

Thus, multilayer structures are fabricated using the seed crystalapproach described herein. As illustrated in FIG. 10, multiple levels ofelectronics (e.g., CMOS circuits) are fabricated in the silicon devicelayers that are separated from the various assembly wafers as thestructure is built up layer by layer. Although growth of III-Vs onsilicon is illustrated, other embodiments utilize other material systemssuch as GaN on Sapphire and other lattice mismatched structures. In anembodiment, the growth of the final III-V epitaxial material isperformed on seed crystals regions on SOI wafer. One of ordinary skillin the art would recognize many variations, modifications, andalternatives.

It should be noted that III-V devices discussed herein may have otherthan photonic functions. For example, embodiments of the presentinvention can be used to bond III-V materials for high-speed devicessuch as cell phone power amplifiers onto a silicon or SOI wafer withother functions. Other non-photonic applications are included within thescope of the present invention as well.

It is also understood that the examples and embodiments described hereinare for illustrative purposes only and that various modifications orchanges in light thereof will be suggested to persons skilled in the artand are to be included within the spirit and purview of this applicationand scope of the appended claims.

What is claimed is:
 1. A method of fabricating a composite semiconductorstructure, the method comprising: providing a first substrate having adevice surface and one or more semiconductor devices thereon; providinga second substrate having epitaxial compound semiconductor materials;dicing the second substrate to provide a plurality of compoundsemiconductor seed dies; bonding at least one of the plurality ofcompound semiconductor seed dies to the first substrate to form thecomposite semiconductor structure; and growing epitaxial compoundsemiconductor layers on the at least one of the plurality of compoundsemiconductor seed dies.
 2. The method of fabricating the compositesemiconductor structure as recited in claim 1, wherein: the devicesurface is part of a device layer of a silicon-on-insulator (SOI) wafer;the SOI wafer comprises a silicon-dioxide layer under the devicesurface; and the SOI wafer comprises a silicon handle under thesilicon-dioxide layer.
 3. The method of fabricating the compositesemiconductor structure as recited in claim 1, wherein the one or moresemiconductor devices comprise at least one of a CMOS device, a BiCMOSdevice, an NMOS device, a PMOS device, a detector, a CCD, or an opticsdevice.
 4. The method of fabricating the composite semiconductorstructure as recited in claim 1, further comprising: mounting the atleast one of the plurality of compound semiconductor seed dies to athird substrate; and removing the third substrate from the least one ofthe plurality of compound semiconductor seed dies after bonding the atleast one of the plurality of compound semiconductor seed dies to thefirst substrate.
 5. The method of fabricating the compositesemiconductor structure as recited in claim 1, wherein the compositesemiconductor structure comprises one or more photonic devices, whereinthe one or more photonic devices includes a laser, a detector, amodulator, an optical isolator, and/or an optical circulator.
 6. Themethod of fabricating the composite semiconductor structure as recitedin claim 1, the method further comprising bonding the plurality ofcompound semiconductor seed dies to the first substrate.
 7. The methodof fabricating the composite semiconductor structure as recited in claim1, wherein: the first substrate is etched to form a pit; and at leastone of the plurality of compound semiconductor seed dies is bonded inthe pit.
 8. The method of fabricating the composite semiconductorstructure as recited in claim 7, wherein the at least one of theplurality of compound semiconductor seed dies is covered after beingbonded in the pit.
 9. The method of fabricating the compositesemiconductor structure as recited in claim 1, wherein the plurality ofcompound semiconductor seed dies comprise III-V or II-VI material. 10.The method of fabricating the composite semiconductor structure asrecited in claim 1, wherein the first substrate comprises silicon. 11.The method of fabricating the composite semiconductor structure asrecited in claim 1, wherein the first substrate comprises opticalelements formed in silicon.
 12. The method of fabricating the compositesemiconductor structure as recited in claim 11 further comprising, aftergrowing epitaxial compound semiconductor layers, fabricating gate metalson doped regions of the first substrate.
 13. The method of fabricatingthe composite semiconductor structure as recited in claim 1, furthercomprising defining one or more functional elements on the at least oneof the plurality of compound semiconductor seed dies after bonding theat least one of the plurality of compound semiconductor seed dies to thefirst substrate.